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Phase Change Memory Enters a New Phase 2009 Edition

Product Type: Market Research Report
Published by: Forward Insights
Published: October 2009
Product Code: R3643-9
Description
Phase Change Memory Enters a New Phase outlines the challenges phase change memory faces as it vies to compete with mainstream charge-based memories. The report provides thorough analysis of PCM versus current mainstream semiconductor memories such as SRAM, DRAM, NOR flash and NAND flash. An update on the PCM activities of major vendors as well as a market and price forecast out to 2015 based on a detailed roadmap is also provided.

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Table of Contents
Contents

Contents

List of Figures

List of Tables

Terminology

Executive Summary

Memory Overview

Introduction

The Memory Hierarchy

SRAM

Concept

Technology Evolution

DRAM

Concept

Technology Evolution

NOR Flash

Concept

Technology Evolution

NROM

Concept

Technology Evolution

NAND Flash

Concept

Technology Evolution

Phase Change Memory

Introduction

Phase Change Material

Memory Cell Concept

Basic Operation

Memory Cell Variations

Selection Device

PCM Characteristics

Set Time

Reset Current

Endurance

Memory Comparison

Multi-level Cell PCM

Device Layout

PCM Reliability

PCM Cost Drivers

Die Size

Process Complexity

Technology Scaling

Scaling Parameters

Roadmap

PCM Development Status

PCM Development Status

ATMI, Inc.

BAE Systems

CAMELS

Elpida

Hynix Semiconductor

IBM

IMEC

ITRI

Macronix International

Nanochip

Numonyx (Intel/ST)

NXP Semiconductors

Ovonyx

Qimonda AG

Renesas Technology

Samsung Electronics

STMicroelectronics

ULVAC

Market Forecast

PCM as a NOR Replacement

PCM as a Non-volatile RAM

PCM as a Storage Class Memory

Applications

Embedded PCM

Market

References

About the Author

About Forward Insights

Services

Contact

Report Offerings


List of Figures

Figure 1. Memory Hierarchy

Figure 2. SRAM Cell Layout

Figure 3. 3D SRAM Technology

Figure 4. DRAM Cell

Figure 5. DRAM Cell Transistor Evolution

Figure 6. DRAM Cell Capacitor Trend

Figure 7. NOR Flash Cell

Figure 8. NOR Architecture

Figure 9. NOR Flash Cell

Figure 10. NOR Flash Technology Evolution

Figure 11. Drain Bias Margin

Figure 12. NROM Cell Concept

Figure 13. NROM Architecture

Figure 14. NROM Cell

Figure 15. NROM Technology Evolution

Figure 16. Bit Disturb (“Second Bit Effect”)

Figure 17. NAND Flash Cell Concept

Figure 18. NAND Architecture

Figure 19. NAND Cell String

Figure 20. NAND Flash Technology Evolution

Figure 21. NAND Flash Memory Gap Fill

Figure 22. Electrons Stored on the Floating Gate

Figure 23. Samsung 32Gb CTF Memory

Figure 24. Timeline of Phase Change Memory

Figure 25. Periodic Table

Figure 26. GST Composition

Figure 27. Basic PCM Cell Structure

Figure 28. Set Operation

Figure 29. Reset Operation

Figure 30. Phase Change Memory I-V Curve

Figure 31. Memory Array Operation

Figure 32. µTrench and Lance Structures

Figure 33. Lance and pore structure

Figure 34. Phase Change Bridge Memory

Figure 35. MOS and BJT Selector

Figure 36. Diode Selector

Figure 37. Set Time Trend

Figure 38. Dependence of Reset Current on Contact Area

Figure 39. Reset Current Reduction with Ta2O5 Interfacial Layer

Figure 40. Reset Current Trend

Figure 41. PCM Endurance

Figure 42. Read Access Time Comparison

Figure 43. Write Throughput

Figure 44. Program Performance Comparison

Figure 45. MLC Write Approaches

Figure 46. MLC Distribution

Figure 47. Multi-level States as a Function of Pulse Tail

Figure 48. 16-Level and 4-Level PCM

Figure 49. Samsung Phase Change Memory Device Evolution

Figure 50. Samsung 90nm 512Mb PRAM Layout

Figure 51. ST/Intel Phase Change Memory Device Evolution

Figure 52. NOR Flash and PCM Architecture

Figure 53. Intel 256Mb 130nm 28F256L18 StrataFlash Organization

Figure 54. 128Mb (256Mb MLC) PCM Organization

Figure 55. Endurance as a function of Energy per Pulse

Figure 56. PCM vs. NOR Flash

Figure 57. Phase Change Memory Technology Evolution

Figure 58. Samsung PRAM Cell Size Evolution

Figure 59. SABEC Process

Figure 60. PRAM Module

Figure 61. 180nm Process µTrench PCM Process

Figure 62. Phase Change Memory with µTrench Cell

Figure 63. Scaling Parameters

Figure 64. PCM Scaling Challenges

Figure 65. Memory Roadmaps

Figure 66. Bit Size Trend

Figure 67. Density Trend

Figure 68. Areal Density Trend

Figure 69. Embedded PCM Roadmap

Figure 70. U.S. PCM Patents from 1990 to January 2007

Figure 71. Radition-hard C-RAM

Figure 72. Memory Device Characteristics - 2012

Figure 73. PCM in the Memory System

Figure 74. Hybrid FTL for NAND/PCM

Figure 75. SCM Target Specifications

Figure 76. Enterprise Data Systems Memory & Storage

Figure 77. SCM Address Translation

Figure 78. PCM as an Unified Memory

Figure 79. PCM in the Memory Hierarchy

Figure 80. $/MB Forecast

Figure 81. PCM NOR Replacement Rate

Figure 82. Enterprise DRAM TAM

Figure 83. Memory Revenue Forecast


List of Tables

Table 1. Memory Comparison

Table 2. PCM Development Status
Ordering and More Information
Price and Delivery Options



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